Part Number
|
K4E661612D |
Manufacturer
|
Samsung |
Description
|
CMOS DRAM |
Published
|
Apr 25, 2005 |
Detailed Description
|
Industrial Temperature K4E661612D,K4E641612D CMOS DRAM
4M x 16bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
...
|
Datasheet
|
K4E661612D
|
Overview
Industrial Temperature K4E661612D,K4E641612D CMOS DRAM
4M x 16bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs.
Extended Data Out Mode offers high speed random access of memory cells within the same row.
Refresh cycle(4K Ref.
or 8K Ref.
), access time (-45, -50 or -60), power consumption( Normal or Low power) are optional features of this family.
All of this family have C A S -before-R A S refresh, R A S -only refresh and Hidden refresh capabilities.
Furthermore, Self-refresh operation is available in L-version.
This 4Mx16 EDO Mode DRAM family is fabricated u s i n g S a m s u n g ′s a d v a n c e d C M O S p r ...
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