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K4E661612C

Samsung
Part Number K4E661612C
Manufacturer Samsung
Description 4M x 16bit CMOS Dynamic RAM
Published Apr 25, 2005
Detailed Description K4E661612C,K4E641612C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,1...
Datasheet PDF File K4E661612C PDF File

K4E661612C
K4E661612C

Overview
K4E661612C,K4E641612C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs.
Extended Data Out Mode offers high speed random access of memory cells within the same row.
Refresh cycle(4K Ref.
or 8K Ref.
), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family.
All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.
Furthermore, Self-refresh operation is available in L-version.
This 4Mx16 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.
FEATURES • Part Identification - K4E661612C-TC/L(3.
3V, 8K Ref.
) - K4E641612C-TC/L(3.
3V, 4K Ref.
) • Extended Data Out Mode operation • 2 CAS Byte/Word Read/Write operation • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability • Fast parallel test mode ca...


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