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K4E661612D

Samsung
Part Number K4E661612D
Manufacturer Samsung
Description CMOS DRAM
Published Apr 25, 2005
Detailed Description Industrial Temperature K4E661612D,K4E641612D CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION ...
Datasheet PDF File K4E661612D PDF File

K4E661612D
K4E661612D

Overview
Industrial Temperature K4E661612D,K4E641612D CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs.
Extended Data Out Mode offers high speed random access of memory cells within the same row.
Refresh cycle(4K Ref.
or 8K Ref.
), access time (-45, -50 or -60), power consumption( Normal or Low power) are optional features of this family.
All of this family have C A S -before-R A S refresh, R A S -only refresh and Hidden refresh capabilities.
Furthermore, Self-refresh operation is available in L-version.
This 4Mx16 EDO Mode DRAM family is fabricated u s i n g S a m s u n g ′s a d v a n c e d C M O S p r o c e s s t o r e a l i z e h i g h b a n d - w i d t h , l o w p o w e r c o n s u m p t i o n a n d h i g h r e l i a b i l i t y .
FEATURES • Part Identification - K4E661612D-TI/P(3.
3V, 8K Ref.
) - K4E641612D-TI/P(3.
3V, 4K Ref.
) • R A S-only and Hidden refresh capability • Fast parallel test mode...


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