LS5905 LS5906 LS5907 LS5908 LS5909
Linear Integrated Systems
FEATURES
LOW DRIFT ULTRA LOW LEAKAGE LOW PINCHOFF |∆VGS1-2 /∆T|= 5µV/°C max.
IG = 150fA TYP.
VP= 2V TYP.
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature
-65° to +150°C +150°C D1
S1
G2
G1
3
5
S2
Maximum Voltage and Current for Each
Transistor NOTE 1 Gate Voltage to Drain or Source 40V -VGSS -VDSO -IG(f) -IG Drain to Source Voltage Gate Forward Current Gate Reverse Current 40V 10mA 10µA
D1 2 D2 S1 G1 S2
6 D2
1
7 G2
Maximum Power Dissipation Device Dissipation @ Free Air - Total
2...