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LS5909

Part Number	LS5909
Manufacturer	Micross
Description	Low Leakage
Published	Jun 13, 2011
Detailed Description	LS5909 LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET The LS5909 is a high-performance monolithic dual JFET featuri...
Datasheet	LS5909 PDF File

Overview

LS5909 LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET The LS5909 is a high-performance monolithic dual JFET featuring tight matching and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications where tight tracking is required.
The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation.
(See Packaging Information).
FEATURES LOW DRIFT ULTRA LOW LEAKAGE LOW PINCHOFF ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) | VGS1‐2 / T| = 5µV/°C TYP.
IG = 150fA TYP.
Vp = 2V TYP.
LS5909 Benefits: Tight Tracking Good matching Ultra Low Leakage Low Drift Maximum Temperatures Storage Temperature ‐65°C to +150°C Operating Junction Temperature +150°C Maximum Voltage and Current for Each Transistor – Note 1 ‐VGSS Gate Voltage to Drain or Source 40V ‐VDSO Drain to Source Voltage 40V ‐IG(f) Gate Forward Current 10mA ‐IG Gate Revers...

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