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LS5909

Part Number	LS5909
Manufacturer	Linear Integrated Systems
Description	LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Published	Apr 25, 2005
Detailed Description	LS5905 LS5906 LS5907 LS5908 LS5909 Linear Integrated Systems FEATURES LOW DRIFT ULTRA LOW LEAKAGE LOW PINCHOFF \|∆VGS1-2 ...
Datasheet	LS5909 PDF File

Overview

LS5905 LS5906 LS5907 LS5908 LS5909 Linear Integrated Systems FEATURES LOW DRIFT ULTRA LOW LEAKAGE LOW PINCHOFF |∆VGS1-2 /∆T|= 5µV/°C max.
IG = 150fA TYP.
VP= 2V TYP.
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature -65° to +150°C +150°C D1 S1 G2 G1 3 5 S2 Maximum Voltage and Current for Each Transistor NOTE 1 Gate Voltage to Drain or Source 40V -VGSS -VDSO -IG(f) -IG Drain to Source Voltage Gate Forward Current Gate Reverse Current 40V 10mA 10µA D1 2 D2 S1 G1 S2 6 D2 1 7 G2 Maximum Power Dissipation Device Dissipation @ Free Air - Total 22 X 20 MILS 40mW @ +125°C BOTTOM VIEW ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS LS5906 LS5907 LS5908 LS5909 LS5905 5 10 20 40 40 |∆VGS1-2 /∆T| max.
Drift vs.
Temperature |VGS1-2| max.
-IGmax.
-IGmax.
-IGSSmax.
-IGSSmax.
SYMBOL BVGSS BVGGO Yfss Yfs |Yfs1-2/Yf...

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