MITSUBISHI RF POWER MODULE M68761 SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM MOBILE RADIO OUTLINE DRAWING 42 37 30 2-R1.
5 Dimensions in mm BLOCK DIAGRAM 2 3 4 1 5 6 9.
6 14.
7 19.
7 27.
4 32.
4 PIN: 1 Pin : RF INPUT 2 VDD1 : 1st DRAIN BIAS SUPPLY 3 VGG : GATE BIAS SUPPLY 4 VDD2 : 2nd DRAIN BIAS SUPPLY 5 PO : RF OUTPUT 6 GND: FIN H15 ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions ZG=ZL=50Ω f=820-851MHz, ZG=ZL=50Ω f=820-851MHz, ZG=ZL=50Ω f=820-851MHz, ZG=ZL=50Ω Ratings 17 4 10 10 -30 to +100 -40 to +100 Unit...

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