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M68701

Mitsubishi
Part Number M68701
Manufacturer Mitsubishi
Description SILICON MOS FET POWER AMPLIFIER
Published Apr 26, 2005
Detailed Description MITSUBISHI RF POWER MODULE M68701 SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM PORTABLE RADIO OUTLINE DRAWING 6...
Datasheet PDF File M68701 PDF File

M68701
M68701

Overview
MITSUBISHI RF POWER MODULE M68701 SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM PORTABLE RADIO OUTLINE DRAWING 60.
5±1 57.
5±0.
5 50.
4±1 2-R1.
6+0.
2 0 Dimensions in mm BLOCK DIAGRAM 2 3 1 4 5 1 2 3 4 5 0.
45±0.
2 8.
3±1 21.
3±1 43.
3±1 51.
3±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions VGG≤3.
5V, ZG=ZL=50Ω f=820-851MHz, ZG=ZL=50Ω f=820-851MHz, ZG=ZL=50Ω f=820-851MHz, ZG=ZL=50Ω Ratings 17 5.
5 10 10 -30 to +100 -40 to +100 Unit V V mW W °C °C Note.
Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C,ZG=ZL=50Ω unless otherwise noted) Symbol f PO ηT 2fO ρin Frequency range Output power Total efficiency 2nd.
harmonic Input VSWR Stability Load VSWR tolerance Parameter Test conditions Limits Min 820 6 35 Max 851 Unit MHz W % dBc - VDD=12.
5V, VGG=5V, Pin=1mW ZG=ZL=50Ω, VDD=10-16V, Load VSWR<4:1 VDD=15.
2V, Pin=1mW, PO=6W (VGG adjust), ZL=20:1 -30 4 No parasitic oscillation No degradation or destroy Note.
Above parameters, ratings, limits and test conditions are subject to change.
Nov.
´97 MITSUBISHI RF POWER MODULE M68701 SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM PORTABLE RADIO TYPICAL PERFORMANCE DATA OUTPUT POWER, INPUT VSWR, TOTAL EFFICIENCY VS.
FREQUENCY 10 9 8 7 6 5 4 3 2 1 ρin ηT PO 100 90 80 VDD=12.
5V 70 VGG=5V 60 Pin=1mW ZG=ZL=50Ω 50 40 30 20 10 0.
1 -30 -25 -20 -15 -10 -5 0 5 1 10 1.
0 10 OUTPUT POWER, TOTAL EFFICIENCY VS.
INPUT POWER 100.
0 1000 f=820MHz VDD=12.
5V VGG=5V ZG=ZL=50Ω PO 10.
0 100 ηT 0 0 790 800 810 820 830 840 850 860 870 880 FREQUENCY f (MHz) INPUT POWER Pin (dBm) OUTPUT POWER, TOTAL EFFICIENCY VS.
INPUT POWER 100.
0 1000 f=851MHz VDD=12.
5V VGG=5V 10.
0 PO 100 OUTPUT POWER, TOTAL EFFICIENCY VS.
GATE SUPPLY VOLTAGE 10 9 8 7 ...


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