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M68701H

Mitsubishi
Part Number M68701H
Manufacturer Mitsubishi
Description Silicon MOS FET Power Amplifier
Published Apr 26, 2005
Detailed Description ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MODULE M68701H Silicon M...
Datasheet PDF File M68701H PDF File

M68701H
M68701H

Overview
ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MODULE M68701H Silicon MOS FET Power Amplifier, 890-960MHz 6W FM /Digital Mobile D im e n s i o n s i n m m O U T L IN E D R A W IN G B L O C K D IAG R A M 60.
5 +/-1 57.
5 +/-0.
5 50.
2+/-1 +0.
2 2-R1.
6 0 11+/-0.
5 14+/-0.
5 2 3 1 4 5 1 2 phai 0.
45 +/-0.
2 3 4 5 6+/-1 8.
3 +/-1 21.
3 +/-1 43.
3 +/-1 51.
3 +/-1 PIN: 1 P in : RF INPUT 2 V G G : G A T E B IA S S U P P L Y 3 V D D : D R A IN B I A S S U P P L Y 4 PO : RF OUTPUT 5 G N D : FIN 2.
3+/-0.
3 3.
4+0.
8 -0.
4 H11 MAXIMUM RATINGS (Tc=25deg C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER VDD SUPPLY VOLTAGE VGG GATE BIAS VOLTAGE Pin INPUT POWER Po OUTPUT POWER Tc(OP) OPERATION CASE TEMPERATURE Tstg STORAGE TEMPERATURE Note:Above parameters are guaranteed independently.
CONDITIONS VGG<5V,ZG=ZL=50 ohms f=890-960MHz,ZG=ZL=50 ohms f=890-960MHz,ZG=ZL=50 ohms f=890-960MHz,ZG=ZL=50 ohms RATINGS 17 5.
5 10 10 -30 to +100 -40 to +110 UNIT V V mW W deg.
C deg.
C ELECTRICAL CHARACTERISTICS (Tc=25deg.
C ,Zg=Zl=50 ohms UNLESS OTHERWISE NOTED) SYMBOL f Po Efficiency 2fo VSWR in PARAMETER FREQUENCY RANGE OUTPUT POWER TOTAL EFFICIENCY 2nd HARMONIC INPUT VSWR LOAD VSWR TOLERANCE TEST CONDITIONS LIMITS MIN MAX 890 960 6 35 -30 4 No degradation or destroy UNIT MHz W % dBc - VDD=12.
5V,VGG=5V,Pin=1mW VDD=12.
5V, Pout=6W (VGG adjust) Pin=1mW VDD=15.
2V,Pin=1mW,Po=6W(VGG adjust) ZG=50 ohms, LOAD VSWR=20:1 ABOVE PARAMETERS, RATINGS, LIMITS AND CONDITIONS ARE SUBJECT TO CHANGE .
Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circ...


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