Philips Semiconductors
Preliminary specification
Silicon Diffused Power
Transistor
PHE13009
GENERAL DESCRIPTION
The PHE13009 is a silicon
npn power switching
transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching
regulators, motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Fall time CONDITIONS VBE = 0 V TYP.
0.
32 0.
...