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PHE13005

NXP
Part Number PHE13005
Manufacturer NXP
Description Silicon Diffused Power Transistor
Published Mar 22, 2005
Detailed Description TO-220AB PHE13005 Silicon diffused power transistor 21 January 2014 Product data sheet 1. General description High vo...
Datasheet PDF File PHE13005 PDF File

PHE13005
PHE13005

Overview
TO-220AB PHE13005 Silicon diffused power transistor 21 January 2014 Product data sheet 1.
General description High voltage, high speed NPN planar-passivated power switching transistor in a SOT78 plastic package intended for use in high frequency electronic lighting ballast applications 2.
Features and benefits • Fast switching • High voltage capability of 700 V • Low thermal resistance 3.
Applications • Electronic lighting ballasts 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions IC collector current DC; Fig.
4; Fig.
1; Fig.
2 Ptot total power dissipation Tmb ≤ 25 °C; Fig.
3 VCESM collector-emitter peak VBE = 0 V voltage Static characteristics hFE DC current gain IC = 1 A; VCE = 5 V; Tmb = 25 °C; Fig.
11 IC = 2 A; VCE = 5 V; Tmb = 25 °C; Fig.
11 Min Typ Max Unit - - 4A - - 75 W - - 700 V 12 20 40 10 17 28 Scan or click this QR code to view the latest information for this product NXP Semiconductors 5.
Pinning information Table 2.
Pinning information Pin Symbol Description Simplified outline 1 B base mb 2 C collector 3 E emitter mb C mounting base; connected to collector PHE13005 Silicon diffused power transistor Graphic symbol C B E sym123 123 TO-220AB (SOT78) 6.
Ordering information Table 3.
Ordering information Type number Package Name PHE13005 TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78 7.
Limiting values Table 4.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions VCESM collector-emitter peak voltage VBE = 0 V VCBO collector-base voltage IE = 0 A VCEO collector-emitter voltage IB = 0 A IC collector current DC; Fig.
4; Fig.
1; Fig.
2 ICM peak collector current IB base current DC IBM peak base current Ptot total power dissipation Tmb ≤ 25 °C; Fig.
3 Tstg storage temperature Tj junction temperature VEBO emitter-base voltage IC = 0...


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