DatasheetsPDF.com

PHE13003C

NXP
Part Number PHE13003C
Manufacturer NXP
Description NPN power transistor
Published Oct 16, 2010
Detailed Description TO-92 PHE13003C NPN power transistor 7 October 2013 Product data sheet 1. General description High voltage, high spee...
Datasheet PDF File PHE13003C PDF File

PHE13003C
PHE13003C

Overview
TO-92 PHE13003C NPN power transistor 7 October 2013 Product data sheet 1.
General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) plastic package.
2.
Features and benefits • Fast switching • High typical DC current gain • High voltage capability of 700 V • Very low switching and conduction losses 3.
Applications • Compact fluorescent lamps (CFL) • Low power electronic lighting ballasts • Off-line self-oscillating power supplies (SOPS) for battery charging 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions IC collector current DC Ptot total power dissipation Tlead ≤ 25 °C; Fig.
1 VCESM collector-emitter peak VBE = 0 V voltage Static characteristics hFE DC current gain IC = 0.
5 A; VCE = 2 V; Tlead = 25 °C Min Typ Max Unit - - 1.
5 A - - 2.
1 W - - 700 V 8 17 25 Scan or click this QR code to view the latest information for this product NXP Semiconductors PHE13003C NPN power transistor 5.
Pinning information Table 2.
Pinning information Pin Symbol Description 1 B base 2 C collector 3 E emitter Simplified outline 321 TO-92 (SOT54) Graphic symbol C B E sym123 6.
Ordering information Table 3.
Ordering information Type number Package Name PHE13003C TO-92 Description plastic single-ended leaded (through hole) package; 3 leads Version SOT54 7.
Limiting values Table 4.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions VCESM collector-emitter peak voltage VBE = 0 V VCBO collector-base voltage IE = 0 A VCEO collector-emitter voltage IB = 0 A IC collector current DC ICM peak collector current IB base current DC IBM peak base current Ptot total power dissipation Tlead ≤ 25 °C; Fig.
1 Tstg storage temperature Tj junction temperature VEBO emitter-base voltage IC = 0 A; I(Emitter) = 10 mA Min Max Unit - 700 V - 700 V - 400 V - 1.
5 A - 3A - 0.
75 A - 1.
5 A - 2.
1 W -65 150 °C...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)