Philips Semiconductors
Product specification
TrenchMOS™
transistor Logic level FET
FEATURES
• ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance • Surface mounting package
PHT6N03LT
SYMBOL
d
QUICK REFERENCE DATA VDSS = 30 V ID = 5.
9 A
g s
RDS(ON) ≤ 30 mΩ (VGS = 5 V) RDS(ON) ≤ 28 mΩ (VGS = 10 V) SOT223
DESCRIPTION
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power
transistor using ’trench’ technology.
The device has very low on-state resistance.
It is intended for use in dc to dc converters and general purpose switching applications.
The PHT6N03LT is supplied in the SOT223 ...