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PHT6N03LT

NXP
Part Number PHT6N03LT
Manufacturer NXP
Description TrenchMOS transistor Logic level FET
Published Mar 22, 2005
Detailed Description Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Ve...
Datasheet PDF File PHT6N03LT PDF File

PHT6N03LT
PHT6N03LT

Overview
Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance • Surface mounting package PHT6N03LT SYMBOL d QUICK REFERENCE DATA VDSS = 30 V ID = 5.
9 A g s RDS(ON) ≤ 30 mΩ (VGS = 5 V) RDS(ON) ≤ 28 mΩ (VGS = 10 V) SOT223 DESCRIPTION GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor using ’trench’ technology.
The device has very low on-state resistance.
It is intended for use in dc to dc converters and general purpose switching applications.
The PHT6N03LT is supplied in the SOT223 surface mounting package.
PINNING PIN 1 2 3 tab gate drain source drain 4 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 ˚C to 150˚C Tj = 25 ˚C to 150˚C; RGS = 20 kΩ Tamb = 25 ˚C; VGS = 10 V Tamb = 100 ˚C; VGS = 10 V Tamb = 25 ˚C MIN.
- 55 MAX.
30 30 ± 13 5.
9 4.
1 23.
6 1.
8 150 UNIT V V V A A A W ˚C ESD LIMITING VALUE SYMBOL PARAMETER VC Electrostatic discharge capacitor voltage, all pins CONDITIONS Human body model (100 pF, 1.
5 kΩ) MIN.
MAX.
2 UNIT kV THERMAL RESISTANCES SYMBOL PARAMETER Rth j-sp Rth j-a Thermal resistance junction to solder point Thermal resistance junction to ambient CONDITIONS mounted on any pcb mounted on test pcb of fig:17 MIN.
TYP.
MAX.
UNIT 70 15 K/W K/W January 1998 1 Rev 1.
300 Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET ELECTRICAL CHARACTERISTICS Tj= 25˚C unless otherwise specified SYMBOL PARAMETER V(BR)DSS V(BR)GSS VGS(TO) RDS(ON) gfs IDSS IGSS Qg(tot) Qgs Qgd td on tr td off tf Ld Ld Ls Ciss Coss Crss Drain-source br...


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