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PHT6N03T

NXP
Part Number PHT6N03T
Manufacturer NXP
Description TrenchMOS transistor Standard level FET
Published Mar 22, 2005
Detailed Description Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel en...
Datasheet PDF File PHT6N03T PDF File

PHT6N03T
PHT6N03T

Overview
Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting.
Using ’trench’ technology, the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV.
It is intended for use in DC-DC converters and general purpose switching applications.
PHT6N03T QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Tsp = 25 ˚C Drain current (DC) Tamb = 25 ˚C Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX.
30 12.
8 5.
9 8.
3 150 30 UNIT V A A W ˚C mΩ PINNING - SOT223 PIN 1 2 3 4 gate drain source drain (tab) DESCRIPTION PIN CONFIGURATION 4 SYMBOL d g s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature CONDITIONS RGS = 20 kΩ Tsp = 25 ˚C Tamb = 25 ˚C Tsp = 100 ˚C Tamb = 100 ˚C Tsp = 25 ˚C Tamb = 25 ˚C Tsp = 25 ˚C Tamb = 25 ˚C MIN.
- 55 MAX.
30 30 16 12.
8 5.
9 9 4.
1 51.
2 23.
6 8.
3 1.
8 150 UNIT V V V A A A A A A W W ˚C THERMAL RESISTANCES SYMBOL Rth j-sp Rth j-amb PARAMETER Thermal resistance junction to solder point Thermal resistance junction to ambient CONDITIONS Mounted on any PCB Mounted on PCB of Fig.
19 TYP.
12 MAX.
15 70 UNIT K/W K/W November 1997 1 Rev 1.
200 Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage, all pins CONDITIONS Human body model (100 pF, 1.
5 kΩ) MIN.
- PHT6N03T MAX.
2 UNIT kV STATIC CHARACTERISTICS Tj= 25˚C unless otherwise specified SYMBOL V(...


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