MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE13005/D
MJE13005*
Designer's
SWITCHMODE Series
NPN Silicon Power
Transistors
These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical.
They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching
Regulator’s, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.
SPECIFICATION FEATURES: • VCEO(sus) 400 V • Reverse Bias SOA with Inductive Loads @ TC = 100_C • Inductive Switching Matrix 2 to 4 Amp, 25 and 100_C .
.
.
tc @ 3A, 100_C is 180 ns (Typ) • 700 V Blocking Capability • SOA and Switching Applications Information...