MJE210
MJE210
Feature
• Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA (Min.
) • Complement to MJE200
1
TO-126 2.
Collector 3.
Base
1.
Emitter
PNP Epitaxial Silicon
Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value - 40 - 25 -8 -5 15 150 - 65 ~ 150 Units V V V A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVCEO ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) Parameter Collector-Emitter Breakdown...