MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE243/D
Complementary Silicon Power Plastic
Transistors
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designed for low power audio amplifier and low–current, high–speed switching applications.
• High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — MJE243, MJE253 • High DC Current Gain @ IC = 200 mAdc hFE = 40 – 200 hFE = 40 – 120 — MJE243, MJE253 • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.
3 Vdc (Max) @ IC = 500 mAdc • High Current Gain Bandwidth Product — fT = 40 MHz (Min) @ IC = 100 mAdc • Annular Construction for Low Leakages ICBO = 100 nAdc (Max) @ Rated VCB MAXIMUM RATINGS
MJE243*
PNP MJE253*
*Motorola Preferred Device
NPN
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