www.
DataSheet4U.
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MJE243 −
NPN, MJE253 −
PNP
Preferred Device
Complementary Silicon Power Plastic
Transistors
These devices are designed for low power audio amplifier and low−current, high−speed switching applications.
Features http://onsemi.
com
• High Collector−Emitter Sustaining Voltage − • High DC Current Gain @ IC = 200 mAdc • • • •
hFE = 40−200 = 40−120 Low Collector−Emitter Saturation Voltage − VCE(sat) = 0.
3 Vdc (Max) @ IC = 500 mAdc High Current Gain Bandwidth Product − fT = 40 MHz (Min) @ IC = 100 mAdc Annular Construction for Low Leakages ICBO = 100 nAdc (Max) @ Rated VCB Pb−Free Packages are Available* VCEO(sus) = 100 Vdc (Min)
4.
0 AMPERES POWER
TRANSISTORS COMPLEMENTARY SIL...