Phototransistors PNZ109F Silicon NPN Phototransistor Unit : mm For optical control systems Features Flat window design which is suited to optical systems Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting devices : λp = 900 nm (typ.
) Fast response : tr = 8 µs (typ.
) Long lifetime, high reliability 4.
5±0.
2 ø4.
6±0.
15 Glass window 12.
7 min.
3-ø0.
45±0.
05 2.
54±0.
25 0 1.
.
2 ±0 0± 0.
15 45± 3˚ 1.
Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operating...

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