March 1996
NDS356P P-Channel Logic Level Enhancement Mode Field Effect
Transistor
General Description
These P-Channel logic level enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Features
-1.
1 A, -20V.
RDS(ON) = 0.
3Ω @ VGS = -4.
5V.
Proprietary pac...