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NDS352P

Fairchild
Part Number NDS352P
Manufacturer Fairchild
Description P-Channel Logic Level Enhancement Mode Field Effect Transistor
Published May 12, 2005
Detailed Description March 1996 NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These P-Channel l...
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NDS352P
NDS352P

Overview
March 1996 NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Features -0.
85A, -20V.
RDS(ON) = 0.
5Ω @ VGS = -4.
5V.
Proprietary package design using copper lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
Compact industry standard SOT-23 surface mount package.
____________________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ,TSTG Parameter Drain-Source Voltage T A = 25°C unless otherwise noted NDS352P -20 ±12 (Note 1a) Units V V A Gate-Source Voltage - Continuous Maximum Drain Current - Continuous - Pulsed Maximum Power Dissipation (Note 1a) (Note 1b) ±0.
85 ±10 0.
5 0.
46 -55 to 150 W Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient (Note 1a) 250 (Note 1) °C/W °C/W Thermal Resistance, Junction-to-Case 75 © 1997 Fairchild Semiconductor Corporation NDS352P Rev.
F1 Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = -250 µA VDS = -16 V, VGS = 0 V TJ =125°C Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 12 V, VDS =...


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