BB101C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-505 1st.
Edition Features • Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics; (NF = 2.
0 dB typ.
at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode.
Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.
Outline CMPAK–4 2 3 4 1 1.
Source 2.
Gate1 3.
Gate2 4.
Drain BB101C Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 +6 –0 ±6 25 100 150 –55 to +150 Unit V V V mA ...

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