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BB102C

Hitachi
Part Number BB102C
Manufacturer Hitachi
Description Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Published Jun 3, 2005
Detailed Description BB102C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-588 (Z) 1st. Edition November 1997 Features • Build...
Datasheet PDF File BB102C PDF File

BB102C
BB102C

Overview
BB102C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-588 (Z) 1st.
Edition November 1997 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics; (NF = 2.
1 dB typ.
at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode.
Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; CMPAK-4(SOT-343mod) Outline CMPAK-4 2 3 1 4 1.
Source 2.
Gate1 3.
Gate2 4.
Drain • Note 1 Marking is “BW–”.
• Note 2 BB302C is individual type number of HITACHI BBFET.
BB102C Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 +10 –0 ±10 25 100 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Symbol Min V(BR)DSS V(BR)G1SS V(BR)G2SS 12 +10 ±10 — — 0.
1 0.
5 10 16 1.
2 0.
7 — 16 — Typ — — — — — — — 15 21 1.
6 1.
1 0.
011 20 2.
1 Max — — — +100 ±100 0.
8 1.
1 20 — 2.
2 1.
5 0.
03 — 3.
1 Unit V V V nA nA V V mA mS pF pF pF dB dB Test Conditions I D = 200µA, VG1S = VG2S = 0 I G1 = +10 µA, VG2S = VDS = 0 I G2 = ±10µA, VG1S = VDS = 0 VG1S = +9V, V G2S = VDS = 0 VG2S = ±9V, VG1S = VDS = 0 VDS = 9V, VG2S = 6V, ID = 100µA VDS = 9V, VG1S = 9V, ID = 100µA VDS = 9V, VG1 = 9V, VG2S = 6V RG = 560kΩ VDS = 9V, VG1 = 9V, VG2S =6V RG = 560kΩ, f = 1kHz VDS = 9V, VG1 = 9V VG2S =6V, RG = 560kΩ f = 1MHz VDS = 9V, VG1 = 9V, VG2S =6V RG = 120kΩ, f = 900MHz Gate1 to source cutoff current I G1SS Gate2 to source cutoff current I G2SS Gate1 to source cutoff voltage VG1S(off) Gate2 to source cutoff voltage VG2S(off) Drain current Forward transfer admittance Input capacitance Output capacitance I D(op) |yfs| c iss c oss Reverse transfer capacitance c rss Power gain Noise figure PG NF 2 BB102C Main Characte...


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