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BB101M

Hitachi
Part Number BB101M
Manufacturer Hitachi
Description Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Published Jun 3, 2005
Detailed Description BB101M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-504 1st. Edition Features • Build in Biasing Circui...
Datasheet PDF File BB101M PDF File

BB101M
BB101M

Overview
BB101M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-504 1st.
Edition Features • Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics; (NF = 2.
0 dB typ.
at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode.
Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.
Outline MPAK-4 2 3 1 4 1.
Source 2.
Gate1 3.
Gate2 4.
Drain BB101M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 +6 –0 ±6 25 150 150 –55 to +150 Unit V V V mA mW °C °C 2 BB101M Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate 1 to source breakdown voltage Gate 2 to source breakdown voltage Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS Min 6 +6 ±6 — — 0.
2 0.
4 10 16 Typ — — — — — — — 15 22 Max — — — +100 ±100 0.
8 1.
0 20 — Unit V V V nA nA V V mA mS Test conditions I D = 200 µA VG1S = VG2S = 0 I G1 = +10 µA VG2S = VDS = 0 I G2 = ±10 µA VG1S = VDS = 0 VG1S = +5 V VG2S = VDS = 0 VG2S = ±5 V VG1S = VDS = 0 VDS = 5 V, VG2S = 4 V I D = 100 µA VDS = 5 V, VG1S = 5 V I D = 100 µA VDS = 5 V, VG1 = 5 V VG2S = 4 V, RG = 220 kΩ VDS = 5 V, VG1 = 5 V, VG2S = 4 V, RG = 220 kΩ, f = 1 kHz VDS = 5 V, VG1 = 5 V VG2S = 4 V, RG = 220 kΩ f = 1 MHz VDS = 5 V, VG1 = 5 V VG2S = 4 V RG = 220 kΩ, f = 900 MHz Gate 1 to source cutoff current I G1SS Gate 2 to source cutoff current I G2SS Gate 1 to source cutoff voltage VG1S(off) Gate 2 to source cutoff voltage VG2S(off) Drain current Forward transfer admittance I D(op) |yfs| Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Note: Marking is “AU–”.
Ciss Coss Crss PG NF 1.
2 0.
7 — 16 — 1.
7 1.
1 0.
012 20 2.
0 2.
2 1.
5 0.
03 — 3.
0 pF pF pF dB dB 3 BB101M Main Characteristics Test Circuit for Operating Items (I D(op) , |yfs|, Ciss, Coss, Crss, NF, PG) V...


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