Part Number
|
BB102C |
Manufacturer
|
Hitachi |
Description
|
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Published
|
Jun 3, 2005 |
Detailed Description
|
BB102C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-588 (Z) 1st. Edition November 1997 Features
• Build...
|
Datasheet
|
BB102C
|
Overview
BB102C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-588 (Z) 1st.
Edition November 1997 Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics; (NF = 2.
1 dB typ.
at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode.
Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; CMPAK-4(SOT-343mod)
Outline
CMPAK-4
2 3 1 4
1.
Source 2.
Gate1 3.
Gate2 4.
Drain
• Note 1 Marking is “BW–”.
• Note 2 BB302C is individual type number of HITACHI BBFET.
BB102C
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel po...
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