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Part Number
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BB102M |
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Manufacturer
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Hitachi |
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Description
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Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
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Published
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Jun 3, 2005 |
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Detailed Description
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BB102M
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-587 (Z) 1st. Edition November 1997 Features
• Build...
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Datasheet
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BB102M
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Overview
BB102M
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-587 (Z) 1st.
Edition November 1997 Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics; (NF = 2.
1 dB typ.
at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode.
Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4(SOT-143mod)
Outline
MPAK-4
2 3 1 4
1.
Source 2.
Gate1 3.
Gate2 4.
Drain
• Note 1 Marking is “BW–”.
• Note 2 BB302M is individual type number of HITACHI BBFET.
BB102M
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel powe...
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