Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
BB501C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-701C (Z) 4th. Edition Nov. 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF,...
Hitachi