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BB502M

Hitachi
Part Number BB502M
Manufacturer Hitachi
Description Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Published Jun 3, 2005
Detailed Description BB502M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-809B(Z) 3rd. Edition Jun. 1999 Features • • • • Bui...
Datasheet PDF File BB502M PDF File

BB502M
BB502M

Overview
BB502M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-809B(Z) 3rd.
Edition Jun.
1999 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise; NF = 1.
6 dB typ.
at f = 900 MHz High gain; PG = 22 dB typ.
at f = 900 MHz Withstanding to ESD; Build in ESD absorbing diode.
Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1.
Source 2.
Gate1 3.
Gate2 4.
Drain Notes: 1.
2.
Marking is “BS–”.
BB502M is individual type number of HITACHI BBFET.
BB502M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 +6 –0 +6 –0 20 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS Min 6 +6 +6 — — 0.
5 0.
5 8 20 Typ — — — — — 0.
7 0.
7 11 25 Max — — — +100 +100 1.
0 1.
0 14 30 Unit V V V nA nA V V mA mS Test Conditions I D = 200µA VG1S = VG2S = 0 I G1 = +10 µA VG2S = VDS = 0 I G2 = +10 µA VG1S = VDS = 0 VG1S = +5V VG2S = VDS = 0 VG2S = +5V VG1S = VDS = 0 VDS = 5V, VG2S = 4V I D = 100µA VDS = 5V, VG1S = 5V I D = 100µA VDS = 5V, VG1 = 5V VG2S = 4V, RG = 180kΩ VDS = 5V, VG1 = 5V VG2S =4V RG = 180kΩ, f = 1kHz VDS = 5V, VG1 = 5V VG2S =4V, RG = 180kΩ f = 1MHz VDS = 5V, VG1 = 5V VG2S =4V, RG = 180kΩ f = 900MHz Gate1 to source cutoff current I G1SS Gate2 to source cutoff current I G2SS Gate1 to source cutoff voltage VG1S(off) Gate2 to source cutoff voltage VG2S(off) Drain current Forward transfer admittance I D(op) |yfs| Input capacitance Output capacitance c iss c oss 1.
4 0.
7 — 17 — 1.
7 1.
1 0.
02 22 1.
6 2.
0 1.
5 0.
05 — 2.
2 pF pF pF dB dB Reverse transfer capacitance c rss Power gain Noise figure PG NF 2 BB50...


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