|
Part Number
|
BB501 |
|
Manufacturer
|
Hitachi |
|
Description
|
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier |
|
Published
|
Jun 3, 2005 |
|
Detailed Description
|
BB501C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-701C (Z) 4th. Edition Nov. 1998 Features
• Build in...
|
|
Datasheet
|
BB501
|
Overview
BB501C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-701C (Z) 4th.
Edition Nov.
1998 Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• High gain; PG = 21.
5 dB typ.
at f = 900 MHz • Low noise; NF = 1.
85 dB typ.
at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode.
Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; CMPAK-4(SOT-343mod)
Outline
CMPAK-4
2 3 1 4
1.
Source 2.
Gate1 3.
Gate2 4.
Drain
Notes: 1.
Marking is “AS–”.
2.
BB501C is individual type number of HITACHI BBFET.
BB501C
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Dra...
Similar Datasheet