Part Number
|
BB502C |
Manufacturer
|
Hitachi |
Description
|
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier |
Published
|
Jun 3, 2005 |
Detailed Description
|
BB502C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-810B(Z) 3rd. Edition Jun. 1999 Features
• • • • Bui...
|
Datasheet
|
BB502C
|
Overview
BB502C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-810B(Z) 3rd.
Edition Jun.
1999 Features
• • • • Build in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise; NF = 1.
6 dB typ.
at f = 900 MHz High gain; PG = 22 dB typ.
at f = 900 MHz Withstanding to ESD; Build in ESD absorbing diode.
Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; CMPAK-4(SOT-343mod)
Outline
CMPAK-4
2 3 1 4
1.
Source 2.
Gate1 3.
Gate2 4.
Drain
Note:
1.
2.
Marking is “BS–”.
BB502C is individual type number of HITACHI BBFET.
BB502C
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain ...
Similar Datasheet