PD - 91574B
IRG4PH50U
INSULATED GATE BIPOLAR
TRANSISTOR
Features
• UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, 200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • Optimized for power conversion; SMPS, UPS and welding • Industry standard TO-247AC package
C
Ultra Fast Speed IGBT
VCES = 1200V
G E
VCE(on) typ.
= 2.
78V
@VGE = 15V, IC = 24A
n-channel
Benefits
• Higher switching frequency capability than competitive IGBTs • Highest efficiency available • Much lower conduction losses than MOSFETs • More efficient than short circuit rated IGBTs
TO-247AC
Absolute Maximum Ra...