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IRG4PH50S

IRF
Part Number IRG4PH50S
Manufacturer IRF
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Jun 29, 2005
Detailed Description PD -91712A IRG4PH50S INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage an...
Datasheet PDF File IRG4PH50S PDF File

IRG4PH50S
IRG4PH50S

Overview
PD -91712A IRG4PH50S INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package C Standard Speed IGBT VCES =1200V G E VCE(on) typ.
= 1.
47V @VGE = 15V, IC = 33A n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ...


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