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GT60M323

Part Number GT60M323
Manufacturer Toshiba
Description Silicon N-Channel IGBT
Published Sep 5, 2005
Datasheet GT60M323




Features
GT60M323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M323 Voltage Resonance Inverter Switching Application Unit: mm




• Enhancement mode type High speed : tf = 0.09 µs (typ.) (IC = 60 A) Low saturation voltage : VCE (s...






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