Part Number
|
GT60M323 |
Manufacturer
|
Toshiba |
Description
|
Silicon N-Channel IGBT |
Published
|
Sep 5, 2005 |
Datasheet
|
GT60M323
|
Features
GT60M323
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60M323
Voltage Resonance Inverter Switching Application
Unit: mm
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• Enhancement mode type High speed : tf = 0.09 µs (typ.) (IC = 60 A) Low saturation voltage : VCE (s...
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