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GT60M323

Toshiba
Part Number GT60M323
Manufacturer Toshiba
Description Silicon N-Channel IGBT
Published Sep 5, 2005
Detailed Description GT60M323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M323 Voltage Resonance Inverter Switching...
Datasheet PDF File GT60M323 PDF File

GT60M323
GT60M323

Overview
GT60M323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M323 Voltage Resonance Inverter Switching Application Unit: mm • • • • • Enhancement mode type High speed : tf = 0.
09 µs (typ.
) (IC = 60 A) Low saturation voltage : VCE (sat) = 2.
3 V (typ.
) (IC = 60 A) FRD included between emitter and collector TO-3P(LH) (Toshiba package name) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Pulsed collector current Diode forward current Collector power dissipation Junction temperature Storage temperature range DC Pulsed @ Tc = 100°C @ Tc = 25°C @ Tc = 100°C @ Tc = 25°C Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 900 ±25 31 60 120 15 120 80 200 150 −55 to 150 Unit V V A A A JEDEC JEITA TOSHIBA ― ― 2-21F2C W °C °C Weight: 9.
75 g (typ.
) Thermal Characteristics Characteristics Thermal resistance (IGBT) Thermal resistance (diode) Symbol Rth (j-c) Rth (j-c) Max 0.
625 4.
0 Unit °C/W °C/W Equivalent Circuit Collector Marking Part No.
(or abbreviation code) Gate Emitter TOSHIBA GT60M323 Lot No.
JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish.
1 2004-07-06 GT60M323 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Diode forward voltage Reverse recovery time Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VF trr IF = 15 A, VGE = 0 IF = 60 A, di/dt = −20 A/µs Test Condition VGE = ±25 V, VCE = 0 VCE = 900 V, VGE = 0 IC = 60 mA, VCE = 5 V IC = 60 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Resistive Load VCC = 600 V, IC = 60 A VGG = ±15 V, RG = 51 Ω (Note 1) Min ― ― 4.
0 ― ― ― ― ― ― ― ― Typ.
― ― ― 2.
3 4200 0.
25 0.
37 0.
09 0.
40 1.
1 1.
4 Max ±500 0.
1 7.
0 2.
8 ― ― ― 0.
20 ― 1.
9 3.
0 V µs µs Unit nA mA V V pF Note 1: Switching time measurement circuit and input/o...


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