DatasheetsPDF.com

GT60M322

Toshiba
Part Number GT60M322
Manufacturer Toshiba
Description Silicon N-Channel IGBT
Published Sep 5, 2005
Detailed Description GT60M322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M322 Voltage Resonance Inverter Switching...
Datasheet PDF File GT60M322 PDF File

GT60M322
GT60M322

Overview
GT60M322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M322 Voltage Resonance Inverter Switching Application Current Resonance Inverter Switching Application • • • • • Enhancement mode type High speed : tf = 0.
15 µs (typ.
) (IC = 60 A) Low saturation voltage : VCE (sat) = 2.
3 V (typ.
) (IC = 60 A) FRD included between emitter and collector TO-3P(LH) (Toshiba package name) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms DC Pulsed @ Tc = 100°C @ Tc = 25°C Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 950 ±25 60 120 25 50 76 190 150 −55 to 150 Unit V V A JEDEC A ― ― 2-21F2C Diode forward current Collector power dissipation Junction temperature JEITA TOSHIBA W °C °C Weight: 9.
75 g (typ.
) Storage temperature range Thermal Characteristics Characteristics Thermal resistance (IGBT) Thermal resistance (diode) Symbol Rth (j-c) Rth (j-c) Max 0.
66 1.
38 Unit °C/W °C/W Equivalent Circuit Collector Marking Part No.
(or abbreviation code) TOSHIBA Gate Emitter GT60M322 Lot No.
JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish.
1 2004-07-06 GT60M322 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Diode forward voltage Reverse recovery time Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VF trr IF = 25 A, VGE = 0 IF = 25 A, di/dt = −200 A/µs Test Condition VGE = ±25 V, VCE = 0 VCE = 950 V, VGE = 0 IC = 60 mA, VCE = 5 V IC = 60 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Resistive Load VCC = 600 V, IC = 60 A VGG = ±15 V, RG = 30 Ω (Note 1) Min ― ― 6.
0 ― ― ― ― ― ― ― ― Typ.
― ― ― 2.
3 6800 0.
42 0.
62 0.
15 0.
39 ― ― Max ±500 1.
0 9.
0 2.
7 ― ― ― 0.
21 ― 3.
0 0.
35 V µs µs Unit nA mA V V pF Note 1: Switching time measurement circuit and input/output wave...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)