SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF421/D
The RF Line
NPN Silicon RF Power
Transistor
Designed primarily for application as a high–power linear amplifier from 2.
0 to 30 MHz.
• Specified 12.
5 Volt, 30 MHz Characteristics — Output Power = 100 W (PEP) Minimum Gain = 10 dB Efficiency = 40% • Intermodulation Distortion @ 100 W (PEP) — IMD = –30 dB (Min) • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
MRF421
100 W (PEP), 30 MHz RF POWER
TRANSISTORS
NPN SILICON
CASE 211–11, STYLE 1
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Withstand Current — 10 s Total Device Dissipation @...