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Philips Semiconductors
Product specification
N-channel enhancement mode TrenchMOSTM
transistor
GENERAL DESCRIPTION
N-channel enhancement mode standard level field-effect power
transistor in a plastic envelope using ’trench’ technology.
The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV.
It is intended for use in switched mode power supplies and general purpose switching applications.
IRFZ44N
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX.
55 49 110 175 22 UNIT V A...