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IRFZ40FI

STMicroelectronics
Part Number IRFZ40FI
Manufacturer STMicroelectronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
Published Aug 10, 2016
Detailed Description IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFZ40 IRFZ40FI VDSS 50 V 50 V R DS( on) < 0....
Datasheet PDF File IRFZ40FI PDF File

IRFZ40FI
IRFZ40FI

Overview
IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFZ40 IRFZ40FI VDSS 50 V 50 V R DS( on) < 0.
028 Ω < 0.
028 Ω ID 50 A 27 A s TYPICAL RDS(on) = 0.
022 Ω s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW GATE CHARGE s HIGH CURRENT CAPABILITY s 175oC OPERATING TEMPERATURE APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.
) 3 2 1 3 2 1 TO-220 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VD S Drain-source Voltage (VGS = 0) VDG R Drain- gate Voltage (RGS = 20 kΩ) VGS Gate-source Voltage ID Drain Current (cont.
) at Tc = 25 oC ID Drain Current (cont.
) at Tc = 100 oC IDM(•) Drain Current (pulsed) Ptot Total Dissipation at Tc = 25 oC Derating Factor VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max.
Operating Junction Temperature (•) Pulse width limited by safe operating area July 1993 Value IRFZ40 IRFZ40FI 50 50 50 50 ± 20 50 27 35 19 200 200 150 45 1 0.
3  2000 -65 to 175 175 Unit V V V A A A W W/oC V oC oC 1/9 IRFZ40/FI THERMAL DATA Rthj-case Rthj- amb R th c-s Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose TO-220 1 ISOWATT220 3.
33 6 2.
5 0.
5 300 oC/W oC/W oC/W oC AVALANCHE CHARACTERISTICS Symb ol IA R EAS EAR IA R Pa ra met er Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) Single Pulse Avalanche Energy (st arting Tj = 25 oC, ID = IAR, VD D = 25 V) Repetitive Avalanche Energy (pulse width limited by Tj max, δ < 1%) Avalanche Current, Repetitive or Not-Repetitive (Tc = 100 oC, pulse width limited by Tj max, δ < 1%) Max Value 50 400 100 35 Unit A mJ mJ A ELECTRICAL CHARACTERISTICS (T...


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