JDV2S01S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S01S VCO for UHF band Unit in mm • • • High capacitance ratio: C1V/C4V = 2.
0 (typ.
) Low series resistance: rs = 0.
5 Ω (typ.
) This device is suitable for use in a small-size tuner.
Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150 −55~150 Unit V °C °C JEDEC EIAJ   1-1K1A Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Capacitance Capacitance ratio Series resistance Symbol VR IR C1V C4V C1V/C4V rs IR = 1 µA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz  VR = 1 V, f = 470 MHz Test Condition TOSHIBA ...

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