MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPF930/D TMOS Switching N–Channel — Enhancement 2 GATE 3 DRAIN MPF930 MPF960 MPF990 1 SOURCE MAXIMUM RATINGS Rating Drain – Source Voltage Drain – Gate Voltage Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Drain Current Continuous(1) Pulsed(2) Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance Symbol VDS VDG VGS VGSM ID IDM PD 1.
0 8.
0 TJ, Tstg θJA – 55 to 150 125 Watts mW/°C °C °C/W MPF930 35 35 MPF960 60 60 ± 20 ± 40 2.
0 3.
0 MPF990 90 90 Unit Vdc Vdc Vdc Vpk Adc 1 2 3 CASE 29–05, STYLE 22 TO–92 (TO–226AE) ELECTRICAL CHARACTERISTICS (...

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