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MPF910

Motorola
Part Number MPF910
Manufacturer Motorola
Description TMOS Switching
Published May 11, 2017
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching N–Channel — Enhancement MPF910 3 DRAIN 2 GATE 1 SOURCE MAXIMUM...
Datasheet PDF File MPF910 PDF File

MPF910
MPF910

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching N–Channel — Enhancement MPF910 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Drain Current – Continuous(1) – Pulsed(2) Total Device Dissipation @ TA = 25°C Derate above 25°C MPF910 VDS VGS VGSM ID IDM PD 60 Vdc ± 20 Vdc ± 40 Vpk 0.
5 Adc 1.
0 1.
0 Watts 8.
0 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C MFE910 PD 6.
25 Watts 50 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACT...


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