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MPF960

Motorola
Part Number MPF960
Manufacturer Motorola
Description (MPF930 / MPF960 / MPF990) TMOS Switching
Published Oct 15, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPF930/D TMOS Switching N–Channel — Enhancement 2 GATE ...
Datasheet PDF File MPF960 PDF File

MPF960
MPF960

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPF930/D TMOS Switching N–Channel — Enhancement 2 GATE 3 DRAIN MPF930 MPF960 MPF990 1 SOURCE MAXIMUM RATINGS Rating Drain – Source Voltage Drain – Gate Voltage Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Drain Current Continuous(1) Pulsed(2) Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance Symbol VDS VDG VGS VGSM ID IDM PD 1.
0 8.
0 TJ, Tstg θJA – 55 to 150 125 Watts mW/°C °C °C/W MPF930 35 35 MPF960 60 60 ± 20 ± 40 2.
0 3.
0 MPF990 90 90 Unit Vdc Vdc Vdc Vpk Adc 1 2 3 CASE 29–05, STYLE 22 TO–92 (TO–226AE) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 10 µAdc) V(BR)DSX MPF930 MPF960 MPF990 IGSS 35 60 90 — — — — — — — — 50 nAdc Vdc Gate Reverse Current (VGS = 15 Vdc, VDS = 0) ON CHARACTERISTICS(2) Zero–Gate–...


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