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UTC 2SD1616/A
NPN EPITAXIAL SILICON
TRANSISTOR
NPN EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
*Audio frequency power amplifier *Medium speed switching
1
TO-92
1: EMITTER
2: COLLECTOR
3: BASE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Storage Temperature Junction Temperature Total Power Dissipation (Ta=25°C) Collector to Base Voltage: D1616 D1616A Collector to Emitter Voltage: D1616 D1616A Emitter to Base Voltage Collector Current (DC) Collector Current (*Pulse) Note: (*) Pulse width≤10ms, Duty cycle50% VEBO Ic Ic VCEO
SYMBOL
Tstg Tj Pc VCBO
VALUE
-55 ~+150 150 750 60 120 50 60 6 1 2
UNIT
°C °C mW V V V A A
CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
Collector Cut-Off Curr...