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D1615A

NEC
Part Number D1615A
Manufacturer NEC
Description 2SD1615A
Published Sep 12, 2016
Detailed Description DATA SHEET SILICON TRANSISTORS 2SD1615, 2SD1615A NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD DESCRIPTION 2SD1615...
Datasheet PDF File D1615A PDF File

D1615A
D1615A

Overview
DATA SHEET SILICON TRANSISTORS 2SD1615, 2SD1615A NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits.
FEATURES • World Standard Miniature Package • Low VCE (sat) VCE(sat) = 0.
15 V • Complement to 2SB1115, 2SD1115A ABSOLUTE MAXIMUM RATINGS Maximum Voltages and Currents (TA = 25 ˚C) 2SD1615 2SD1615A Collector to Base Voltage VCBO 60 120 V Collector to Emitter Voltage VCEO 50 60 V Emitter to Base Voltage VEBO 6 A Collector Current (DC) IC 1 A Collector Current (Pulse)* IC 2A Maximum Power Dissipation Total Power Dissipation at 25 ˚C Ambient Temperature** PT 2.
0 W Maximum Temperatures Junction Temperature Tj 150 ˚C Storage Temperature Range Tstg –55 to +150 ˚C * PW ≤ 10 ms, Duty Cycle ≤ 50 % ** When mounted on ceramic substrate of 16 cm2 × 0.
7 mm 0.
8 MIN.
2.
5 ± 0.
1 4.
0 ± 0.
25 PACKAGE DIMENSIONS in millimeters 4.
5 ± 0.
1 1.
6 ± 0.
2 1.
5 ± 0.
1 C EB 0.
42 ±0.
06 1.
5 0.
47 ± 0.
06 3.
0 0.
42±0.
06 0.
41+– 00.
.
0053 1.
Emitter 2.
Collector 3.
Base ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Collector Saturation Voltage Base Saturation Voltage Base to Emitter Voltage Gain Bandwidth Product Output Capacitance SYMBOL MIN.
ICBO IEBO hFE1*** hFE2*** VCE(sat)*** VBE(sat)*** VBE*** fT Cob 135 135 81 600 80 TYP.
290 270 0.
15 0.
9 160 19 MAX.
UNIT 100 nA 100 nA 100 nA 600 400 0.
3 V 1.
2 V 700 mV MHz pF TEST CONDITIONS 2SD1615 VCB = 60 V, IE = 0 2SD1615A VCB = 120 V, IE = 0 VEB = 6.
0 V, IC = 0 2SC1615 VCE = 2.
0 V, IC = 100 mA 2SD1615A VCE = 2.
0 V, IC = 1.
0 A IC = 1.
0 A, IB = 50 mA IC = 1.
0 A, IB = 50 mA VCE = 2.
0 V, IC = 50 mA VCE = 2.
0 V, IE = –100 mA VCB = 10 V, IE = 0, f = 1.
0 MHz *** Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2 % hFE Classification MARKING 2SD1615 2SD1615A hFE GM GQ 135 to 270 Document No.
D10...


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