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D1610

Hitachi Semiconductor
Part Number D1610
Manufacturer Hitachi Semiconductor
Description 2SD1610
Published Jul 11, 2017
Detailed Description 2SD1609, 2SD1610 Silicon NPN Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SB1109...
Datasheet PDF File D1610 PDF File

D1610
D1610

Overview
2SD1609, 2SD1610 Silicon NPN Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110 Outline TO-126 MOD 123 1.
Emitter 2.
Collector 3.
Base Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 2SD1609 160 160 5 100 1.
25 150 –45 to +150 2SD1610 200 200 5 100 1.
25 150 –45 to +150 Unit V V V mA W °C °C 2SD1609, 2SD1610 Electrical Characteristics (Ta = 25°C) 2SD1609 2SD1610 Item Symbol Min Typ Max Min Typ Max Collector to base breakdown voltage V(BR)CBO 160 — — 200 — — Collector to emitter breakdown voltage V(BR)CEO 160 — — 200 — — Emitter to base breakdown voltage V(BR)EBO 5 —— 5 —— Collector cutoff current ICBO — — 10 — — — — — — — — 10 DC current tarnsfer ratio ...


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