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C2235

Part Number C2235
Manufacturer Toshiba Semiconductor
Description 2SC2235
Published Nov 5, 2005
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2235 Audio Power Amplifier Applications Driver Stage Ampl...
Datasheet C2235




Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2235 Audio Power Amplifier Applications Driver Stage Amplifier Applications 2SC2235 Unit: mm • Complementary to 2SA965.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5 V Collector current IC 800 mA Base current IB 80 mA Collector power dissipation PC 900 mW Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC TO-92MOD Note1: Using continuously under heavy loads (e.
g.
the application of high JEITA ― temperature/current/voltage and the sig...






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