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C2209

Panasonic
Part Number C2209
Manufacturer Panasonic
Description Silicon NPN Transistor
Published Feb 28, 2021
Detailed Description Power Transistors 2SC2209 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SA0...
Datasheet PDF File C2209 PDF File

C2209
C2209

Overview
Power Transistors 2SC2209 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SA0963 120° 7.
5+–00.
.
15 Unit: mm 2.
9±0.
2 2.
3±0.
2 3.
8±0.
3 11.
0±0.
5 ■ Features 3.
05±0.
1 • Large collector power dissipation PC • Output of 5 W can be obtained by a complementary pair with 2SA0963 ■ Absolute Maximum Ratings Ta = 25°C 1.
9±0.
1 16.
0±1.
0 / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 50 V c type Collector-emitter voltage (Base open) VCEO 40 V n d tage.
ued Emitter-base voltage (Collector open) VEBO 5 V le s ntin Collector current IC 1.
5 A a e cyc isco Peak collector current n u t life ed, d Collector power dissipation * ICP 3 A PC 10 W duc typ Junction temperature te tin ur Pro tinued Storage temperature Tj 150 °C Tstg −55 to +150 °C g fo con Note) *: TC = 25°C 0.
75±0.
1 0.
5±0.
1 4.
6±0.
2 2.
3±0.
2 123 0.
5±0.
1 1.
26±0.
1 1: Emitter 2: Collector 3: Base TO-126A-A1 Package in n s followlianned dis ■ Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions inc typ Collector-base voltage (Emitter open) c tinued ance Collector-emitter voltage (Base open) M is con inten Collector-base cutoff current (Emitter open) /Dis ma Collector-emitter cutoff current (Base open) D ance type, Emitter-base cutoff current (Collector open) ten ce Forward current transfer ratio *1, 2 ain nan Collector-emitter saturation voltage M ainte Base-emitter saturation voltage d m Transition frequency (plane Collector output capacitance VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT Cob IC = 1 mA, IE = 0 IC = 2 mA, IB = 0 VCB = 20 V, IE = 0 VCE = 10 V, IB = 0 VEB = 5 V, IC = 0 VCE = 5 V, IC = 1 A IC = 1.
5 A, IB = 0.
15 A IC = 2 A, IB = 0.
2 A VCB = 5 V, IE = − 0.
5 A, f = 200 MHz VCB = 5 V, IE = 0, f = 1 MHz Min Typ Max Unit 50 V 40 V 1 µA 100 µA 10 µA 80 220  1 V 1.
5 V 150 MHz 50 pF (Common base, input open circuited) Note) 1.
Measuring methods ar...


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