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C2229

Toshiba
Part Number C2229
Manufacturer Toshiba
Description Silicon NPN Transistor
Published Aug 28, 2008
Detailed Description 2SC2229 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC2229 Black and White TV Video Output Appli...
Datasheet PDF File C2229 PDF File

C2229
C2229


Overview
2SC2229 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC2229 Black and White TV Video Output Applications High-Voltage Switching Applications Driver Stage Audio Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 150 V (min) • Low output capacitance: Cob = 5.
0 pF (max) • High transition frequency: fT = 120 MHz (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 200 V 150 V 5 V 50 mA 20 mA 800 mW 150 °C −55 to 150 °C JEDEC TO-92MOD JEITA ― TOSHIBA 2-5J1A Weight: 0.
36 g (typ.
) Note1: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2009-12-21 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance ICBO VCB = 200 V, IE = 0 IEBO VEB = 5 V, IC = 0 hFE VCE = 5 V, IC = 10 mA (Note 2) VCE (sat) IC = 10 mA, IB = 1 mA VBE (sat) fT Cob IC = 10 mA, IB = 1 mA VCE = 30 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz Note 2: hFE classification O: 70 to 140, Y: 120 to 240 Marking 2SC2229 Min Typ.
Max Unit ― ― 0.
1 μA ― ― 0.
1 μA...


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