Part Number
|
MRF187R3 |
Manufacturer
|
Motorola |
Description
|
RF POWER FIELD EFFECT TRANSISTORS |
Published
|
Jan 2, 2006 |
Detailed Description
|
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF187/D
The RF MOSFET Line
N–Channel Enhancement–Mode ...
|
Datasheet
|
MRF187R3
|
Overview
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF187/D
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1.
0 GHz.
The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 26 volt base station equipment.
• Guaranteed Performance @ 880 MHz, 26 Volts Output Power — 85 Watts PEP Power Gain — 12 dB Efficiency — 30% Intermodulation Distortion — –28 dBc • 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 26 Vdc, 880 MHz, 85 Watts CW • Excellent Thermal Stability • Characterized with Series...
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